Investigation of optical properties of nanoporous GaN films-Reference-Cited by-同舟云学术

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Investigation of optical properties of nanoporous GaN films

Published:2005-07 Issue:2 Volume:28 Page:141-149
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Vajpeyi A.P.,Tripathy S.,Chua S.J.,Fitzgerald E.A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. Blue InGaN-based laser diodes with an emission wavelength of 450 nm

4. Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire

5. Single-crystal gallium nitride nanotubes

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1. Electrochemical Prediction Tool of Porous GaN Morphology;The Journal of Physical Chemistry C;2024-04-03

2. Review—Progress in Electrochemical Etching of Third-Generation Semiconductors;ECS Journal of Solid State Science and Technology;2023-04-01

3. High-performance shortwave deep-UV response-enhanced photodetector based on nanoporous AlGaO/AlGaN with efficient light-harvesting;Journal of Materials Chemistry C;2023

4. Plasma-free metal-assisted chemical etching producing three-dimensional gallium nitride structures;Journal of Materials Chemistry C;2023

5. Porous InGaN-based metal-semiconductor-metal: Morphology and optical studies;Experimental and Theoretical NANOTECHNOLOGY;2022-10-22

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