Site selective growth of Ge quantum dots on AFM-patterned Si substrates
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Lithographic positioning of self-assembled Ge islands on Si(001)
2. Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
3. Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface
4. Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates
5. Growth of Si and Ge nanostructures on Si substrates using ultrathin SiO/sub 2/ technology
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