Author:
Li Yao,Zhang Jinfeng,Wan Wei,Zhang Yachao,Nie Yuhu,Zhang Jincheng,Hao Yue
Funder
National Natural Science Foundation of China
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference45 articles.
1. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
2. 317 GHz InAlGaN/GaN HEMTs with extremely low on-resistance
3. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
4. Y.F. Wu, M. Moore, A. Saxler, T. Wisleder, P. Parikh, in: Proceedings of IEEE Device Research Conference, 26–28 June 2006, Piscataway, NJ, USA, 2006, pp. 151.
5. kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz
Cited by
17 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献