Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level-Reference-Cited by-同舟云学术

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Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

Published:2013-06 Issue: Volume:51 Page:87-93
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Orlov L.K.,nikova A.A.Mel’,Orlov M.L.,Alyabina N.A.,Ivina N.L.,Neverov V.N.,Horváth Zs.J.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. 50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel

2. Design, fabrication and characterisation of strained Si∕SiGe MOS transistors

3. Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels

4. Insituobservations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures

5. Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures;Semiconductors;2018-08-22

2. Features of electron transport in relaxed Si/Si1 − x Ge x transistor heterostructures with a high doping level;Semiconductors;2014-07

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