Characteristics of ZnO:In thin films prepared by RF magnetron sputtering-Reference-Cited by-同舟云学术

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Characteristics of ZnO:In thin films prepared by RF magnetron sputtering

Published:2009-10 Issue:10 Volume:41 Page:1819-1823
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Peng L.P.,Fang L.,Yang X.F.,Ruan H.B.,Li Y.J.,Huang Q.L.,Kong C.Y.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. A new type of high efficiency with a low‐cost solar cell having the structure of a μc‐SiC/polycrystalline silicon heterojunction

2. Challenges For Flat Panel Display Phosphors

3. Zn 2 SiO 4 as a host material for phosphor-emitting layers of TFEL devices

4. Structural, electrical, and optical properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering

5. Structural and morphological properties of ZnO:Ga thin films

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1. Investigating the simultaneous effect of bias voltage and annealing on structural and optical properties of ZnO layer prepared by RF magnetron sputtering;Results in Optics;2024-02

2. Effect of oxygen annealing treatment on structural, optical and electrical properties of In doped ZnO thin films prepared by PLD technique;Physica B: Condensed Matter;2022-02

3. The influence of annealing on the properties of ZnO:Al layers obtained by RF magnetron sputtering;Opto-Electronics Review;2018-09

4. Growth and characterization of indium doped zinc oxide films sputtered from powder targets;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2017-07-28

5. Physical properties of TiO 2 -doped zinc oxide thin films: Influence of plasma treatment in H 2 and/or Ar gas ambient;Vacuum;2017-06

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