Physical properties of TiO 2 -doped zinc oxide thin films: Influence of plasma treatment in H 2 and/or Ar gas ambient-Reference-Cited by-同舟云学术

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Physical properties of TiO 2 -doped zinc oxide thin films: Influence of plasma treatment in H 2 and/or Ar gas ambient

Published:2017-06 Issue: Volume:140 Page:155-160
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Wang Fang-Hsing,Chao Jen-Chi,Liu Han-Wen,Liu Feng-Jia

Funder

Ministry of Science and Technology of Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference39 articles.

1. Accurate and rapid determination of thickness, n and k spectra, and resistivity of indium–tin–oxide films;Zhang;J. Vac. Sci. Technol. A,1999

2. Nano-sized Ag inserted into ITO films prepared by continuous roll-to-roll sputtering for high-performance, flexible, transparent film heaters;Ko;RSC Adv.,2016

3. In situ crystallization of highly conducting and transparent ITO thin films deposited by RF magnetron sputtering;John;Vacuum,2016

4. Highly conductive and transparent aluminum doped zinc oxide thin films prepared by rf magnetron sputtering;Minami;Jpn. J. Appl. Phys.,1984

5. Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films;Gürbüza;Appl. Surf. Sci.,2015

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