The effect of hot phonons on the drift velocity in GaN/AlGaN two dimensional electron gas
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. High-temperature performance of AlGaN/GaN HFETs on SiC substrates
2. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
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2. Absorption and emission modulation in a MoS2–GaN (0001) heterostructure by interface phonon–exciton coupling;Photonics Research;2019-12-01
3. Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride;Journal of Materials Science: Materials in Electronics;2018-01-11
4. Electron Transport Within III-V Nitride Semiconductors;Springer Handbook of Electronic and Photonic Materials;2017
5. A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review;Journal of Materials Science: Materials in Electronics;2015-05-23
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