Photoreflectance study of InAs quantum dots on GaAs(n11) substrates-Reference-Cited by-同舟云学术

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Photoreflectance study of InAs quantum dots on GaAs(n11) substrates

Published:2006-05 Issue:1-2 Volume:32 Page:139-143
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Rojas-Ramírez J.S.,Pulzara-Mora A.,Cruz-Hernández E.,Perez-Centeno A.,Meléndez-Lira M.,Méndez-García V.H.,López-López M.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. High index orientation effects of strained self-assembled InGaAs quantum dots

2. 3D island nucleation behaviour on high index substrates

3. Study of semiconductor surfaces and interfaces using electromodulation

4. Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (0 0 1) substrate by molecular beam epitaxy

5. Interdiffusion of Indium in piezoelectric InGaAs∕GaAs quantum wells grown by molecular beam epitaxy on (11n) substrates

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relation between grazing incident X-ray diffraction and surface defects in silicon doped GaAs;Physica B: Condensed Matter;2010-05

2. Effects ofin situannealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy;Nanotechnology;2010-03-08

3. Optical transition pathways in type-II Ga(As)Sb quantum dots;Journal of Luminescence;2009-05

4. Temperature dependence of the photoluminescence emission from InxGa1−xAs quantum wells on GaAs(311) substrates;Journal of Applied Physics;2008-12-15

5. Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy;Microelectronics Journal;2008-11

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