Effects ofin situannealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Effects ofin situannealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy

Published:2010-03-08 Issue:13 Volume:21 Page:134012
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Morales-Cortés H,Mejía-García C,Méndez-García V H,Vázquez-Cortés D,Rojas-Ramírez J S,Contreras-Guerrero R,Ramírez-López M,Martínez-Velis I,López-López M

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=13/a=134012/pdf

Reference13 articles.

1. Quantum dot nanostructures and molecular beam epitaxy

2. Self-assembled InAs quantum dots on patterned GaAs(001) substrates: Formation and shape evolution

3. Shape transition of InAs quantum dots by growth at high temperature

4. Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance

5. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings;Physical Review B;2011-03-10

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