Author:
Haugan H.J.,Szmulowicz F.,Brown G.J.,Ullrich B.,R Munshi S.,Grazulis L.,Mahalingam K.,Fenstermaker S.T.
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories;Frontiers in Physics;2022-04-14
2. Effect of antimony segregation on the electronic properties of InAs/InAsSb superlattices;Infrared Sensors, Devices, and Applications VII;2017-08-30
3. On the study of antimony incorporation in InAs/InAsSb superlattices for infrared sensing;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03
4. Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
5. Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices;Journal of Crystal Growth;2016-02