Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer-Reference-Cited by-同舟云学术

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Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer

Published:2005-02 Issue:1-4 Volume:26 Page:276-280
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Cho E.T.,Lee H.D.,Lee D.W.,Lee J.I.,Jung S.I.,Yoon J.J.,Leem J.Y.,Han I.K.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Magnetotransport measurements through stacked InAs self-assembled quantum dots

2. Quantum computation with quantum dots and terahertz cavity quantum electrodynamics

3. Quantum information and computation

4. Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs

5. Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrostatic pressure and temperature effects on the electronic energy levels of a spherical quantum dot placed at the center of a nano-wire;Superlattices and Microstructures;2012-10

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