Structural characterisation of hydrogenated a-Si using slow positron beam techniques
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. The Physics and Applications of Amorphous Semiconductors;Madun,1988
2. Reversible conductivity changes in discharge‐produced amorphous Si
3. Structural model for amorphous silicon and germanium
4. Positron Annihilation in Semiconductors – Defect Studies;Krause-Rehberg,1999
5. Interaction of positron beams with surfaces, thin films, and interfaces
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1. Computational studies of the effect of hydrogen on the thermalized positron state in amorphous silicon;Molecular Physics;2009-08-20
2. Microstructural defect characterisation of a-Si:H deposited by low temperature HW-CVD on paper substrates;Thin Solid Films;2006-04
3. Local structure reconstruction in hydrogenated amorphous silicon from angular correlation and synchrotron diffraction studies;Applied Surface Science;2006-02
4. Positron lifetime and microstructural characterisation of a-Si:H deposited by low temperature HW-CVD on paper substrates;Applied Surface Science;2006-02
5. Positron states in hydrogenated amorphous silicon;Journal of Non-Crystalline Solids;2002-04
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