Correlation between channeling parameters and nitrogen doping concentration in n-type SiC polytype crystals studied by CW- and pulsed-EPR-Reference-Cited by-同舟云学术

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Correlation between channeling parameters and nitrogen doping concentration in n-type SiC polytype crystals studied by CW- and pulsed-EPR

Published:2002-10 Issue:3-4 Volume:195 Page:414-421
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kokkoris M,Mitrikas G,Kossionides S,Perdikakis G,Fanourakis G,Paradellis Th

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference26 articles.

1. SiC for sensors and high-temperature electronics

2. Silicon carbide MOSFET technology

3. Structural and electrical characteristics of oxygen-implanted 6H-SiC

4. Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method

5. Damage in silicon carbide induced by Rutherford backscattering analysis

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