Modification of the high-doped GaAs surface region by its exposure to 150 keV proton beam-Reference-Cited by-同舟云学术

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Modification of the high-doped GaAs surface region by its exposure to 150 keV proton beam

Published:1999-01 Issue:1-2 Volume:149 Page:81-88
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Pinčı́k E.,Jergel M.,Kučera M.,Brunel M.,čičmanec P.,Šmatko V.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference23 articles.

1. Unstable displacement defects and hydrogen trapping in GaAs

2. Electrical isolation in GaAs by light ion irradiation: The role of antisite defects

3. The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs

4. Characterization of deep levels and carrier compensation created by proton irradiation in undoped GaAs

5. Proton Implantation Induced Damage to Heavily Doped n-GaAs as Envisaged by Charge Deep-Level Transient Spectroscopy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-energy particle treatment of GaAs surface;Thin Solid Films;2003-06

2. Study of semiconductor surfaces and interfaces using electromodulation;Surface and Interface Analysis;2001

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