Author:
Lindner J.K.N,Baba K,Hatada R,Stritzker B
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. W.J. Choyke, H. Matsunami, G. Pensl (Eds.), Recent Review: Silicon Carbide, A Review of Fundamental Questions and Applications to Current Device Techniques, Akademie, Berlin, 1997
2. Silicon carbide: synthesis and processing
3. Formation and microstructural development of TiSi2 in (111)Si by Ti ion implantation and annealing at 950 °C
4. Titanium silicide and titanium nitride formation by titanium-ion implantation for MOS LSI applications
5. P. Madakson, G.J. Clark, F.K. Legoues, F.M. d′Heurle, J.E.E. Baglin, Mater. Res. Soc. Symp. Proc. (1988)
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