RBS-channeling analysis of virgin 6HSiC: Experiments and Monte Carlo simulations
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference20 articles.
1. Silicon carbide: synthesis and processing
2. Progress in silicon carbide semiconductor electronics technology
3. Phosphorus and boron implantation in 6H–SiC
4. Recrystallization of ion-implanted α-SiC
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. New developments in the simulation of Rutherford backscattering spectrometry in channeling mode using arbitrary atom structures;Modelling and Simulation in Materials Science and Engineering;2020-09-03
2. <0001> channeling stopping power of MeV He+ ions in 4H- and 6H-SiC.;MRS Proceedings;2002
3. Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-09
4. The minimum yield in channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-04
5. Structural characterization of Ar+-ion-amorphized 6H-SiC wafers annealed at 1100 °C in N2 or wet O2 ambient;Philosophical Magazine B;2000-04
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