12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures-Reference-Cited by-同舟云学术

12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures

Published:1998-09 Issue:3 Volume:143 Page:357-370
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Berti M.,Salvador D.De,Drigo A.V.,Romanato F.,Sambo A.,Zerlauth S.,Stangl J.,Schäffler F.,Bauer G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference26 articles.

1. S. Furukawa, H. Etoh, A. Ishizaka, T. Shimada, Semiconductor with crystalline silicon–germanium–carbon alloy, US Patent #4.885.614, Dec 5, 1989

3. G. Davies, R.C. Newman, in: T.S. Moss (Ed.), Handbook of Semiconductors, vol. 3, Elsevier Science, New York, 1994

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