Removal of vacancy type clusters by low energy ion generated self-interstitials in crystalline silicon-Reference-Cited by-同舟云学术

Removal of vacancy type clusters by low energy ion generated self-interstitials in crystalline silicon

Published:1999-01 Issue:1-4 Volume:148 Page:289-293
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Fedorov A.V.,van Veen A.,Schut H.,Rivera A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Helium desorption/permeation from bubbles in silicon: A novel method of void production

2. A. van Veen, H. Schut, A.V. Fedorov, R.A. Hakvoort, K.T. Westerduin, in: I.M. Robertson, S.J. Zinkle, L.E. Rehn, W.J. Phythian (Eds.), Microstructure of Irradiated Materials, Mat. Res. Soc. Symp. Proc. 373 (1995) 499

3. Monte-Carlo program MODEX: Simulation of point defect clustering during irradiation and subsequent annealing

4. Binding of Copper and Nickel to Cavities in Silicon Formed by Helium Ion Implantation

5. Cavity–dislocation interactions in Si–Ge and implications for heterostructure relaxation

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