The mechanisms of ion beam modification of PMMA for dry etch development ion beam lithography
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Dry Development of Resists Exposed to Focused Gallium Ion Beam
2. Dry development of ion beam exposed PMMA resist
3. Dry development of resists exposed to low‐energy focused gallium ion beam
4. Resist patterning and x-ray mask fabrication employing focused ion beam exposure and subsequent dry etching
5. Plasma‐developed ion‐implanted resists with submicron resolution
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1. Sputtering yields and surface modification of poly(methyl methacrylate) (PMMA) by low-energy Ar+/ ${\rm CF}_3^+$ ion bombardment with vacuum ultraviolet (VUV) photon irradiation;Journal of Physics D: Applied Physics;2012-11-19
2. Etching and structure changes in PMMA coating under argon plasma immersion ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-06
3. Milling of polymeric photonic crystals by focused ion beam;Materials Science and Engineering: C;2005-12
4. Influence of electron irradiation of the NOVER-1 vacuum resist on its resistance to ionbeam etching;Technical Physics;1998-01
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