Defects in carbon and oxygen implanted p-type silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. Effect of carbon on thermal oxidation of silicon and electrical properties of SiO2-Si structures
2. Aggregation Phenomena of Point Defects in Silicon;Kolbesen,1983
3. Carbon in silicon: Properties and impact on devices
4. Proximity gettering with mega‐electron‐volt carbon and oxygen implantations
5. Implanted Carbon: An Effective Etch‐Stop in Silicon
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2. Investigation of MeV-Cu implantation and channeling effects into porous silicon formation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-11
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