Ion beam synthesis of CoSi2: Influence of surface kinetics on nucleation-Reference-Cited by-同舟云学术

Ion beam synthesis of CoSi2: Influence of surface kinetics on nucleation

Published:2001-05 Issue:1-4 Volume:178 Page:327-330
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Volkov A.E.,Ruault M.-O.,Bernas H.,Borodin V.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. In situ study of in-beam cobalt suicide growth in silicon

2. M.-O. Ruault, J. Clayton, H. Bernas, F. Fortuna, O. Kaitasov, in: Les editions de Physique (Ed.), Proceedings of the 13th International Congress on Electrron Microscopy, Vol. 2A, 1994, p. 655

3. Nucleation, Growth and Ostwald Ripening of Cosi2 Precipitates During Co Ion Implantation In Si

4. M. Palard, M.-O. Ruault, H. Bernas, M. Strobel, K.-H. Heinig, in: Proceedings of the Microscopic Material Conference, Inst. Phys. Conf. Series, IOP Publishing, Vol. 157, 1997, p. 501

5. M. Strobel, Ph.D. Thesis, Technical University, Dresden, 1999

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