DLTS and EPR study of defects in H implanted silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon
2. Electrical studies on H-implanted silicon
3. Hydrogen precipitation in highly oversaturated single-crystalline silicon
4. Paramagnetic centres in proton-irradiated silicon
5. Electron paramagnetic resonance study of S2 defects in hydrogen-implanted silicon
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1. Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices;ACS Applied Materials & Interfaces;2016-04-14
2. Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields;Applied Physics Letters;2012-08-20
3. EPR and photoacoustic studies on 30kev H+ ion-implanted n-GaAs;Journal of Luminescence;2007-05
4. RADIATION DEFECT ENGINEERING;International Journal of High Speed Electronics and Systems;2005-03
5. Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon;Journal of Applied Crystallography;2003-04-16
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