Defect formation in 6H-SiC irradiated by 3 MeV He ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. In situ and ex situ investigation of ion-beam-induced amorphization in α-SiC
2. Formation and development of disordered networks in Si-based ceramics under ion bombardment
3. Ion-beam induced damage and annealing behaviour in SiC
4. EELS analysis of SiC crystals under hydrogen and helium dual-ion beam irradiation
5. Ion implantation effects in silicon carbide
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1. Effects of helium irradiation on fine grained β-SiC synthesized by spark plasma sintering;Journal of the European Ceramic Society;2020-01
2. He–vacancy interaction and multiple He trapping in small void of silicon carbide;Journal of Nuclear Materials;2015-02
3. Optical and structural properties of 6H–SiC irradiated by coimplantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-10
4. Effect of H and He irradiation on cavity formation and blistering in ceramics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-09
5. Investigation of radiation damage and hardness of H- and He-implanted SiC;Radiation Effects and Defects in Solids;2012-05
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