He–vacancy interaction and multiple He trapping in small void of silicon carbide-Reference-Cited by-同舟云学术

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He–vacancy interaction and multiple He trapping in small void of silicon carbide

Published:2015-02 Issue: Volume:457 Page:36-41
ISSN:0022-3115
Container-title:Journal of Nuclear Materials
language:en
Short-container-title:Journal of Nuclear Materials

Author:

Li Ruihuan,Li Wenbo,Zhang Chong,Zhang Pengbo,Fan Hongyu,Liu Dongping,Vitos Levente,Zhao Jijun

Funder

Nation Magnetic Fusion Program of China

National Natural Science Foundation of China

The Swedish Research Council

China Scholarship Council

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics

Reference45 articles.

1. Issues and advances in SiCf/SiC composites development for fusion reactors

2. Helium-bubble formation behavior of SiCf/SiC composites after helium implantation

3. Measurement of the effect of radiation damage to ceramic composite interfacial strength

4. The effect of irradiation on the stability and properties of monolithic silicon carbide and SiCf/SiC composites up to 25 dpa

5. Current status and critical issues for development of SiC composites for fusion applications

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1. Release behavior of an interstitial helium atom from 3C-SiC(100) subsurface: A first-principles study;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-08

2. Ab initio study of helium behavior near stacking faults in 3C-SiC;Journal of Physics D: Applied Physics;2024-07-30

3. High-entropy alloys as an irradiation-resistant material: A review;High-Entropy Alloys;2024

4. Understanding helium diffusion in iron: a multiscale modelling method based on the DFT and kinetic Monte Carlo, coupled to TEM and thermo-desorption spectroscopy experiments;Journal of Nuclear Materials;2023-09

5. First-Principles Study of the Stability of Ti _n O _m Clusters and He Behavior Inside Ti _n O ₂ Va ₁ Clusters in Vanadium Alloy;Fusion Science and Technology;2023-08-10

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