High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si-Reference-Cited by-同舟云学术

High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si

Published:1999-11 Issue:3 Volume:159 Page:158-165
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhang Yanwen,Winzell Thomas,Zhang Tonghe,Maximov Ivan A,Sarwe Eva-Lena,Graczyk Mariusz,Montelius Lars,Whitlow Harry J

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. G. Betz, G.K. Wehner, in: R. Behrisch (Eds.), Topics in Applied Physics, V52, Sputtering by Particle Bombardment II, Springer, Berlin, 1983

2. J.M. Bennett, Surface Finish and its Measurement, Optical Society of America, Washington, DC, 1992

3. T.R. Thomas (Ed.), Rough Surface, Longman, London, 1982

4. G. Dearnaley, J.H. Freeman, R.S. Nelson, J. Stephen (Eds.), Ion Implantation, North-Holland, Amsterdam, 1973

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