Defects and strain studies in semiconductor multilayers-Reference-Cited by-同舟云学术

Defects and strain studies in semiconductor multilayers

Published:2000-03 Issue: Volume:161-163 Page:487-491
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Pathak Anand P.,Nageshwara Rao S.V.S.,Siddiqui Azher M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. S.T. Picraux, B.L. Doyle, J.Y. Tsao, Semiconductors and semimetals, in: Thomas P. Pearsall (Ed.), Strained-Layer Superlattices: Materials Science and Technology, Academic Press, New York, 1991

2. Profiling of periodic structures (GaAs–GaAlAs) by nuclear backscattering

3. Ion backscattering and channeling study of InAs‐GaSb superlattices

4. Axial channeling studies of strained-layer superlattices

5. Superlattice interface and lattice strain measurement by ion channeling

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion beam characterization and engineering of strain in semiconductor multi-layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-12

2. Ion beam studies in strained layer superlattices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-06

3. Ion-beam characterization in superlattices;Handbook of Thin Films;2002

4. Ion channeling, high resolution x-ray diffraction and Raman spectroscopy in strained quantum wells;Journal of Applied Physics;2001-09-15