Calibration of a stopping power model for silicon based on analysis of neutron depth profiling and secondary ion mass spectrometry measurements
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference23 articles.
1. Technique for determining concentration profiles of boron impurities in substrates
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1. Non-classical applications of chemical analysis based on nuclear activation;Journal of Radioanalytical and Nuclear Chemistry;2019-12-05
2. Development of certified reference materials of ion-implanted dopants in silicon for calibration of secondary ion mass spectrometers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
3. Reliability of a popular simulation code for predicting sputtering yields of solids and ranges of low-energy ions;Journal of Applied Physics;2004-09
4. Two aspects of thin film analysis: boron profile and scattering length density profile;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2003-06
5. Current literature in Journal of Mass Spectrometry;Journal of Mass Spectrometry;2002-11
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