Channeling energy loss of He2+ in Si by transmission and back-scattering measurements: Experiments and computer modeling
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra
2. Impact-parameter dependence of energy loss for 625-keVH+ions in Si single crystals
3. Energy-loss distributions for 2.5-MeVHe+ions incident on Si single crystals
4. Angular dependence for the energy loss of channeled He ions near the Si and directions
5. Impact-parameter dependence of the electronic energy loss of fast ions
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Calorimetric low temperature detectors for heavy ion physics and their application in nuclear and atomic physics;Progress in Particle and Nuclear Physics;2023-09
2. The electronic stopping powers and angular energy-loss dependence of helium and lithium ions in the silicon crystal;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-09
3. Future Perspectives for the Application of Low Temperature Detectors in Heavy Ion Physics;AIP Conference Proceedings;2009
4. Charge states distribution of 3350 keV He ions channeled in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-06
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