Angular dependence for the energy loss of channeled He ions near the Si and directions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference24 articles.
1. Channeling and related effects in the motion of charged particles through crystals
2. Channeling: Theory, Observation, and Applications,1973
3. The angular dependence of energy loss of channeled 2 MeV helium ions along Si 〈100〉 axis
4. Energy loss distributions for 625 keV H+ ions channeled near the 〈100〉 axis in silicon
5. Impact-parameter dependence of energy loss for 625-keVH+ions in Si single crystals
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1. The study of channeling parameters of protons along axial and planar directions of Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-03
2. The electronic stopping powers and angular energy-loss dependence of helium and lithium ions in the silicon crystal;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-09
3. Large fraction of crystal directions leads to ion channeling;Physical Review B;2016-12-16
4. Channeling energy loss and dechanneling of He along axial and planar directions of Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-01
5. Reprint of: Determination of deuteron characteristic channeling parameters by simulation of RBS spectrum along Si <100>;Radiation Measurements;2015-12
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