Structural relaxation in amorphous silicon carbide
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference39 articles.
1. The effect of ionizing and displacive radiation on the thermal conductivity of alumina
2. Disorder produced in SiC by ion bombardment
3. Structural alterations in SiC as a result of Cr+ and N+ implantation
4. Ion beam modification of 6H/15R SiC crystals
5. Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphization
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