Author:
Alves E.,da Silva M.F.,Soares J.C.,Henry M.O.,Gwilliam R.,Sealy B.J.,Freitag K.,Vianden R.,Stievenard D.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
5 articles.
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1. Optically active erbium–oxygen complexes in GaAs;Applied Physics Letters;2004-03-08
2. Structure and electrical activity of rare-earth dopants in selected III-Vs;MRS Proceedings;2003
3. Emission channeling studies of implanted 167mEr in InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
4. Advances in electron emission channeling measurements in semiconductors;Hyperfine Interactions;2000
5. Lattice sites and damage annealing of Er in low-dose implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01