Sputtering and defect production by focused gold cluster ion beam irradiation of silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference31 articles.
1. Energy spikes in Si and Ge due to heavy ion bombardment
2. Vacancy related defect profiles in MeV cluster-ion irradiated silicon
3. Defect production by MeV cluster impacts
4. MeV cluster ion induced defect production in high Tc superconductors
5. Energy loss by MeV carbon clusters and fullerene ions in solids
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1. Classical molecular dynamic simulation of (111) Si and Al surface sputtering under bombardment by polyatomic clusters;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2012-04
2. Cluster–surface interaction: From soft landing to implantation;Surface Science Reports;2011-10
3. Energetic cluster ion beams: Modification of surfaces and shallow layers;Materials Science and Engineering: R: Reports;2011-08
4. Simulation of doping and primary radiation damage to the SiC(111) surface under bombardment by Si N atomic and cluster ions (N = 1, 5, and 60) using classical molecular dynamics;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2011-04
5. Impact-parameter dependence of the energy loss of fast molecular clusters in hydrogen;Physical Review A;2008-03-12
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