Simulation of doping and primary radiation damage to the SiC(111) surface under bombardment by Si N atomic and cluster ions (N = 1, 5, and 60) using classical molecular dynamics-Reference-Cited by-同舟云学术

Simulation of doping and primary radiation damage to the SiC(111) surface under bombardment by Si N atomic and cluster ions (N = 1, 5, and 60) using classical molecular dynamics

Published:2011-04 Issue:2 Volume:5 Page:249-255
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Bakaev A. V.,Zhurkin E. E.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451011030050.pdf

Reference31 articles.

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