Beam-power heating effect on the synthesis of graded composition epitaxial Si1−xGex alloy layers
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference28 articles.
1. Strain relief in compositionally graded Si1-xGex formed by high dose Ion implantation
2. High-dose Ge+ implantation into silicon at elevated substrate temperature
3. Elevated temperature Ge implantation into Si and the effect of subsequent thermal annealing
4. Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Impact of Boron Halo on Phosphorus Junction Formation and Stability;Electrochemical and Solid-State Letters;2008
2. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08
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