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Role of interface modifications in ion-sputtering mechanism of gold thin films

  • Published:2003-12 Issue: Volume:212 Page:201-205
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Datta D.,Bhattacharyya S.R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Ion–Solid Interactions: Fundamentals and Applications;Nastasi,1996

2. Surface‐layer composition changes in sputtered alloys and compounds

3. Sputtering of PtSi

4. Sputtering by Particle Bombardment III;Wittmaack,1991

5. Transition metal silicides in silicon technology

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1. Optical, Photoluminescence, and Vibrational Spectroscopy of Metal Nanoparticles;Semiconductor Nanocrystals and Metal Nanoparticles;2016-08-17

2. Study of thickness dependent sputtering in gold thin films by swift heavy ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12

3. Sputtering and surface structure modification of gold thin films deposited onto silicon substrates under the impact of 20–160 keV Ar + ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-10

4. Sputtering and surface state evolution of Bi under oblique incidence of 120keV Ar+ ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-05

5. Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20–160keV Ar+ ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-01
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