Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory-Reference-Cited by-同舟云学术

Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory

Published:2003-12 Issue: Volume:212 Page:169-178
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Titov A.I.,Belyakov V.S.,Azarov A.Yu.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference44 articles.

1. Ion beams in silicon processing and characterization

2. Enhanced Diffusion in Silicon Processing

3. A.I. Titov, DSc Thesis, Leningrad Polytechnic Institute, 1989

4. V.S. Belyakov, A.I. Titov, in: Proceedings of the XXIth AllSoviet Conference on Physics of Charged Particle Interaction with Crystals, Moscow, MGU, 1992, p. 173

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial phase-change and geometry modify nanoscale pattern formation in irradiated thin films;Journal of Engineering Mathematics;2024-04-17

2. Radiation Damage Accumulation in α-Ga2O3 under P and PF4 Ion Bombardment;Semiconductors;2023-10

3. A refined numerical simulation approach to assess the neutron irradiation effect on the mechanical behavior of wurtzite GaN;Computational Materials Science;2023-10

4. PECULIARITIES OF STRUCTURE DAMAGE ACCUMULATION UNDER THE IMPLANTATION OF IONS OF DIFFERENT MASSES INTO ALPHA-GALLIUM OXIDE AT LOW DAMAGE LEVELS;ST PETER POLY U J-PH;2023

5. The formation of radiation damage in GaN during successive bombardment by light ions of various energies;Vacuum;2020-03