Study of structural changes in krypton implanted silicon-Reference-Cited by-同舟云学术

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Study of structural changes in krypton implanted silicon

Published:2004-01 Issue:1-2 Volume:215 Page:122-128
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Dubček P.,Pivac B.,Milat O.,Bernstorff S.,Zulim I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. Homogeneous and interfacial heat releases in amorphous silicon

2. Calorimetric evidence for structural relaxation in amorphous silicon

3. Transient structural relaxation of amorphous silicon

4. Structural relaxation and defect annihilation in pure amorphous silicon

5. Transition from relaxed to derelaxed amorphous silicon: Optical characterization

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GISAXS study of cavities and {113} defects induced by neon and helium implantation in silicon;Journal of Applied Crystallography;2006-11-28

2. Nanostructure as seen by the SAXS;Vacuum;2005-10

3. On the use of grazing-incidence small-angle X-ray scattering (GISAXS) in the morphological study of ion-implanted materials;Journal of Synchrotron Radiation;2004-04-21

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