Author:
Kuriyama K.,Satoh Shigeki,Sakai K.,Yokoyama K.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
6 articles.
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1. Variable temperature Hall-effect measurements in ion bombarded InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06
2. Ultrafast trapping times in ion implanted InP;Journal of Applied Physics;2002-09
3. Use of ion implantation for the creation of ultrafast photodetector materials and tuning of quantum well infrared photodetectors;Photodetectors: Materials and Devices VI;2001-06-12
4. The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-05
5. Electrical and optical properties of MeV As and P ion implanted and annealed indium phosphide;2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)