Raman study of low growth temperature GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107268
Reference8 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
3. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
4. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
5. Insights into Metastable Defects in Semi-Insulating GaAs from Electronic Raman Studies of Nonequilibrium Holes
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