Evaluation and control of defects, formed by keV-MeV implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
1. The role of transient damage annealing in shallow junction formation
2. The Mechanisms of Iron Gettering in Silicon by Boron Ion‐Implantation
3. Dopant, defects and oxygen interaction in MeV implanted Czochralski silicon
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1. Formation of Ultra-Shallow Junctions;Comprehensive Semiconductor Science and Technology;2011
2. The influence of implanted yttrium on the cyclic oxidation behaviour of 304 stainless steel;Applied Surface Science;2006-03
3. Boron diffusion in silicon: the anomalies and control by point defect engineering;Materials Science and Engineering: R: Reports;2003-11
4. Reduction of boride-enhanced diffusion by point defect engineering and its application for shallow junction formation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05
5. Reduction of boride enhanced diffusion in MeV-implanted silicon;Journal of Applied Physics;2002-11-15
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