Shallow junction formation in Si-devices: Damage accumulation and the role of photo-acoustic probes and multi-species implantation-Reference-Cited by-同舟云学术

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Shallow junction formation in Si-devices: Damage accumulation and the role of photo-acoustic probes and multi-species implantation

Published:1997-01 Issue:1-4 Volume:121 Page:262-266
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Current Michael I.,Ohno N.,Hara T.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Ion Implantation Technology;Freeman,1993

2. Custom profiles by automated multi-step implantation

3. Defect engineering of p+-junctions by multiple-species ion implantation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sheet Resistance of Ion Implanted Si(100) at Various Doses, Energies and Beam Currents;Journal of the Korean Vacuum Society;2011-03-30

2. Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants;Semiconductor Science and Technology;2003-07-02

3. Diffusion of ion-implanted boron impurities into pre-amorphized silicon;Materials Science in Semiconductor Processing;2000-06

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