Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants

Author:

Nejim A,Sealy B J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Diffusion of strontium implanted in glassy carbon;Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences;2021-06

2. Processing of germanium for integrated circuits;TURKISH JOURNAL OF PHYSICS;2014

3. Metastable Activation of Dopants by Solid Phase Epitaxial Recrystallisation;Subsecond Annealing of Advanced Materials;2014

4. Strengths and Limitations of the Vacancy Engineering Approach for the Control of Dopant Diffusion and Activation in Silicon;MRS Proceedings;2008

5. Vacancy engineering for ultra-shallow junction formation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-08

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