Thermal stability of the electrical isolation in n-type GaAs: Effects of damage and carrier concentrations
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Implant Isolation of GaAs
2. Ion implantation for isolation of III-V semiconductors
3. Proton isolation for GaAs integrated circuits
4. Backgating in GaAs devices and integrated circuits
5. Electrical isolation in GaAs by light ion irradiation: The role of antisite defects
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4. Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature;Journal of Applied Physics;2003-06
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