Author:
Lombardo S.,Raineri V.,Portoghese R.,Campisano S.U.,Pinto A.,La Rosa G.,Ward P.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
3 articles.
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1. Relaxation of strain during solid phase epitaxial growth of Ge+ ion implanted layers in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-09
2. Strain induced defects in Si1−xGex-alloy layers formed by solid phase epitaxial growth of 40 keV Ge+ ion implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-04
3. Strained SiGe-alloy layers formed by solid phase epitaxial growth of Ge+ ion implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-03