Characterization and removal of residual defects in high dose, very low energy BF2+-implanted (001) Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Ion Implantation in Semiconductors and Other Materials;Beanland,1977
2. Damage Effects in Boron and BF 2 Ion‐Implanted p+‐n Junctions in Silicon
3. Annealing behavior of low energy, high dose BF2+ implanted (001) Si
4. Characterization of microstructural defects in BF+2‐implanted silicon
5. Formation of bubbles in BF+2‐implanted silicon
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1. Point defect engineering in preamorphized silicon enriched with fluorine;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
2. Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion;Journal of Applied Physics;2006-05-15
3. High-quality p–n junction fabrication by ion implantation using the LPCVD amorphous silicon films;Vacuum;2003-03
4. Formation of voids in Ti-salicided BF2+-doped submicron polysilicon lines;Journal of Applied Physics;2000-06-15
5. Secondary defects in low-energy As- and BF2-implanted Si;Materials Chemistry and Physics;1998-07
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