Pulsed KrF laser annealing of Mo/Si0.76Ge0.24-Reference-Cited by-同舟云学术

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Pulsed KrF laser annealing of Mo/Si0.76Ge0.24

Published:2000-06 Issue:1-4 Volume:169 Page:129-134
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Luo Jian-Shing,Lin Wen-Tai,Chang C.Y,Shih P.S,Chang T.C

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference27 articles.

1. Heterojunction bipolar transistors using Si-Ge alloys

2. Interfacial Reaction Between Ni and MBE‐Grown SiGe Alloy

3. Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films

4. Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing

5. Thermal reaction between Pt thin films and SixGe1−xalloys

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contact Metallization on Silicon‚ÄìGer manium;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13

2. Overview;Silicon Heterostructure Handbook;2005-11

3. Contact Metallization on Silicon–Germanium;Silicon Heterostructure Handbook;2005-11

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