Ion implantation and thermal annealing in silicon carbide and gallium nitride
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference26 articles.
1. Ion-beam induced damage and annealing behaviour in SiC
2. Irradiation-induced amorphization in β-SiC
3. Structure and properties of ion-beam-modified (6H) silicon carbide
4. Displacement energy measurements for ion-irradiated 6H–SiC
5. Formation and development of disordered networks in Si-based ceramics under ion bombardment
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1. Universal radiation tolerant semiconductor;Nature Communications;2023-08-10
2. Defect and structural evolution under high-energy ion irradiation informs battery materials design for extreme environments;Nature Communications;2020-09-11
3. Lattice location of implanted transition metals in 3C–SiC;Journal of Physics D: Applied Physics;2017-05-03
4. Analysis of Displacement Damage Dose and Low Annealing Temperatures on the I-V Characteristics of SiC Schottky Diodes Using ANOVA Method;Nuclear Technology;2010-12
5. Temperature dependence of damage formation in Ag ion irradiated 4H-SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-10
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