Analysis of Displacement Damage Dose and Low Annealing Temperatures on the I-V Characteristics of SiC Schottky Diodes Using ANOVA Method

Author:

Khorsandi Behrooz1,Kulisek Jonathan2,Blue Thomas E.2,Miller Don2,Baeslack Jon3,Stone Steve4

Affiliation:

1. Arizona State University, School of Electrical, Computer and Energy Engineering 650 East Tyler Mall, Tempe, Arizona 85287

2. The Ohio State University, Nuclear Engineering Program, 201 West 19th Avenue Columbus, Ohio 43210

3. Rensselaer Polytechnic Institute, Department of Mechanical, Aerospace, and Nuclear Engineering, 110 8th Street, Troy, New York 12180

4. Lockheed Martin Space Systems Company, 100 Campus Drive, Newtown, Pennsylvania 18940

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Nuclear Energy and Engineering,Nuclear and High Energy Physics

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