Study of the Schottky barrier and determination of the energetic positions of band edges at the n- and p-type gallium indium phosphide electrode | electrolyte interface
Author:
Publisher
Elsevier BV
Subject
Electrochemistry,General Chemical Engineering,Analytical Chemistry
Reference18 articles.
1. Determination of Some Physical Properties of N‐Type Semiconductor Alloys ( 0 ≤ x ≤ 1 ) by Photoelectrochemistry
2. An efficient photocathode for semiconductor liquid junction cells: 9.4% solar conversion efficiency with p-InP/VCl3-VCl2-HCl/C
3. 11.5% solar conversion efficiency in the photocathodically protectedp‐InP/V3+‐V2+‐HCI/C semiconductor liquid junction cell
4. Hydrogen-evolving semiconductor photocathodes: nature of the junction and function of the platinum group metal catalyst
5. Semiconductor interface characterization in photoelectrochemical solar cells: the p-indium phosphide (111)A face
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