Protection of GaInP2 Photocathodes by Direct Photoelectrodeposition of MoSx Thin Films-Reference-Cited by-同舟云学术

Protection of GaInP2 Photocathodes by Direct Photoelectrodeposition of MoSx Thin Films

Published:2019-06-18 Issue:28 Volume:11 Page:25115-25122
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lancaster Mitchell,Mow Rachel¹,Liu Jun¹^ORCID,Cheek Quintin,MacInnes Molly M.,Al-Jassim Mowafak M.¹,Deutsch Todd G.¹,Young James L.¹,Maldonado Stephen^ORCID

Affiliation:

1. National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401, United States

Funder

Basic Energy Sciences

Workforce Development for Teachers and Scientists

Fuel Cell Technologies Office

National Science Foundation

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b03742

Reference61 articles.

1. Phosphonic Acid Modification of GaInP2 Photocathodes Toward Unbiased Photoelectrochemical Water Splitting

2. A graded catalytic–protective layer for an efficient and stable water-splitting photocathode

3. Direct Water Splitting under Visible Light with Nanostructured Hematite and WO[sub 3] Photoanodes and a GaInP[sub 2] Photocathode

4. Study of the Schottky barrier and determination of the energetic positions of band edges at the n- and p-type gallium indium phosphide electrode | electrolyte interface

5. Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

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